g d s g d s general description product summary v ds i d (at v gs =10v) 11a r ds(on) (at v gs =10v) < 0.65 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot11n60l & AOTF11N60l symbol v ds v gs i dm i ar 8* a avalanche current c v gate-source voltage t c =100c a pulsed drain current c continuous drain current t c =25c i d 11 11* 8 the aot11n60 & AOTF11N60 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 700v@150 drain-source voltage aot11n60 AOTF11N60 AOTF11N60l 600 30 4.8 39 11* 8* g d s top view AOTF11N60 to - 220f to - 220 aot11n60 i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction temperatur e. 0.46 -- units c/w 65 0.5 65 2.5 aot11n60 AOTF11N60 65 -- 3.3 AOTF11N60l maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c c w mj v/ns a mj 272 50 avalanche current single plused avalanche energy g repetitive avalanche energy c 5 0.3 maximum case-to-sink a maximum junction-to-case c/w c/w derate above 25 o c parameter 2.2 0.4 w/ o c junction and storage temperature range maximum junction-to-ambient a,d power dissipation b p d t c =25c thermal characteristics 37.9 -55 to 150 300 4.8 345 690 g d s top view AOTF11N60 to - 220f to - 220 aot11n60 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF11N60
symbol min typ max units 600 700 bv dss / ? tj 0.67 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 0.56 0.65 w g fs 12 s v sd 0.73 1 v i s maximum body-diode continuous current 11 a i sm 39 a c iss 1320 1656 1990 pf c oss 100 146 195 pf c rss 6.5 11.2 16 pf r g 1.7 3.5 5.3 w q g 24 30.6 37 nc q gs 9.6 nc q gd 9.6 nc t d(on) 39 ns t r 58 ns t d(off) 92 ns i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c gate drain charge total gate charge v gs =10v, v ds =480v, i d =11a gate source charge static drain-source on-resistance v gs =10v, i d =5.5a maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-off delaytime v gs =10v, v ds =300v, i d =11a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =5v i d =250 m a v ds =480v, t j =125c zero gate voltage drain current i dss zero gate voltage drain current v ds =600v, v gs =0v bv dss id=250 a, vgs=0v m a v ds =0v, v gs =30v v drain-source breakdown voltage v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =5.5a forward transconductance diode forward voltage t d(off) 92 ns t f 42 ns t rr 400 500 600 ns q rr 4.7 5.9 7.1 m c body diode reverse recovery charge i f =11a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w turn-off fall time body diode reverse recovery time i f =11a,di/dt=100a/ m s,v ds =100v a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =4.8a, v dd =150v, r g =25 ? , starting t j =25 c 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF11N60
typical electrical and thermal characteristics 0 4 8 12 16 20 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.4 0.6 0.8 1.0 1.2 1.4 0 4 8 12 16 20 24 r ds(on) ( w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =5.5a 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0 4 8 12 16 20 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.4 0.6 0.8 1.0 1.2 1.4 0 4 8 12 16 20 24 r ds(on) ( w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =5.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5:break down vs. junction temparature 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF11N60
typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =11a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aot11n60 (note f) 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for AOTF11N60 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 0 3 6 9 12 15 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =11a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area for aot11n60 (note f) 10 m s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area for AOTF11N60 (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 0 2 4 6 8 10 12 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 12: current de-rating (note b) 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 11: maximum forward biased safe operating ar ea for AOTF11N60l (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF11N60
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for aot11n60(note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.46 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 14: normalized maximum transient thermal imp edance for AOTF11N60 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for aot11n60(note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.46 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 14: normalized maximum transient thermal imp edance for AOTF11N60 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance for AOTF11N60 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.3 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF11N60
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id - + vdc l vgs vds id bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF11N60
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